| PART |
Description |
Maker |
| TC58256AFT |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM
256-MBIT (32M X 8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58NS256ADC |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM (32M BYTE SmartMedia)
|
TOSHIBA
|
| TC58FVB160FT-85 TC58FVT160FT-85 TC58FVB160FT-12 TC |
16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY
16 MBIT CMOS FLASH MEMORY 16兆比特的CMOS闪存
|
Toshiba Corporation
Toshiba, Corp.
|
| SLA24C01-D-3/P SLA24C02-D-3/P SLA24C02-S-3/P SLA24 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
1/2 Kbit 128/256 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus
|
SIEMENS A G
SIEMENS AG
Siemens Semiconductor Group
|
| TC58V64BDC |
64-MBIT (8M x 8 BITS) CMOS NAND E PROM (8M BYTE SmartMedia )
64-MBIT (8M 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM)
64-MBIT (8M x 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58FVT160 TC58FVB160FT-10 TC58FVB160FT TC58FVB160 |
16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| CAT93C56VE-1.8-GT3E CAT93C56ZD4E-1.8-GT2E CAT93C56 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
|
ON Semiconductor
Emulation Technology, Inc.
Electronic Theatre Controls, Inc.
HIROSE ELECTRIC Co., Ltd.
Xiamen Hongfa Electroacoustic Co., Ltd.
ITT, Corp.
|
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
| AS6C3216 |
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
|
Alliance Memory
|
| EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits DDR400)
|
Elpida Memory
|
| EDD2508AKTA-5C-E EDD2508AKTA-5B-E EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
ELPIDA[Elpida Memory]
|
| EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5 |
512M bits DDR2 SDRAM (32M words x 16 bits)
|
Elpida Memory
|
